BSP125L6327

Infineon Technologies

Product No:

BSP125L6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4-21

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 94µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Power Dissipation (Max) 1.8W (Ta)
Supplier Device Package PG-SOT223-4-21
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)