BSP129L6327
Infineon Technologies
Product No:
BSP129L6327
Manufacturer:
Package:
PG-SOT223-4-21
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
In Stock : 73029
Minimum: 1 Multiples: 1
Qty
Unit Price
1039
0.2755
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | SIPMOS® |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 108µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Supplier Device Package | PG-SOT223-4-21 |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 240 V |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
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