BSP603S2LNT

Infineon Technologies

Product No:

BSP603S2LNT

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4-21

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : 30783

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1039

    0.2755

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Product Status Active
Vgs(th) (Max) @ Id 2V @ 50µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 33mOhm @ 2.6A, 10V
Power Dissipation (Max) 1.8W (Ta)
Supplier Device Package PG-SOT223-4-21
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)