BYV30JT-600PQ

WeEn Semiconductors

Product No:

BYV30JT-600PQ

Manufacturer:

WeEn Semiconductors

Package:

TO-3P

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 600V 30A TO3P

Quantity:

In Stock : 3840

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.8715

  • 10

    1.55135

  • 100

    1.234905

  • 500

    1.044886

  • 1000

    0.886578

  • 2000

    0.842251

  • 5000

    0.810588

  • 10000

    0.78375

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Product Information

Parameter Info
User Guide
Mfr WeEn Semiconductors
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tube
Technology Standard
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Base Product Number BYV30
Capacitance @ Vr, F -
Supplier Device Package TO-3P
Reverse Recovery Time (trr) 65 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 30A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 30 A