DMWS120H100SM4
Diodes Incorporated
Product No:
DMWS120H100SM4
Manufacturer:
Package:
TO-247-4
Batch:
-
Datasheet:
Description:
SIC MOSFET BVDSS: >1000V TO247-4
Quantity:
In Stock : 4
Minimum: 1 Multiples: 1
Qty
Unit Price
1
19.1995
10
16.91095
100
14.62601
500
13.254818
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Product Information
Parameter Info
User Guide
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +19V, -8V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Base Product Number | DMWS120 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 15V |
| Power Dissipation (Max) | 208W (Tc) |
| Supplier Device Package | TO-247-4 |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 37.2A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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