FCP104N60F

Fairchild Semiconductor

Product No:

FCP104N60F

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 3

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
User Guide
Mfr Fairchild Semiconductor
Series HiPerFET™, Polar™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 104mOhm @ 18.5A, 10V
Power Dissipation (Max) 357W (Tc)
Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 6130 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)