FESB8JT-E3/81
Vishay General Semiconductor - Diodes Division
Product No:
FESB8JT-E3/81
Manufacturer:
Package:
TO-263AB (D²PAK)
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 600V 8A TO263AB
Quantity:
In Stock : 800
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.2255
10
1.09915
100
0.857185
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Base Product Number | FESB8 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | TO-263AB (D²PAK) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
