GP2T080A120H
SemiQ
Product No:
GP2T080A120H
Manufacturer:
Package:
TO-247-4
Batch:
-
Datasheet:
Description:
SIC MOSFET 1200V 80M TO-247-4L
Quantity:
In Stock : 55
Minimum: 1 Multiples: 1
Qty
Unit Price
1
10.1365
10
8.92905
100
7.722075
500
6.998118
1000
6.41896
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Product Information
Parameter Info
User Guide
| Mfr | SemiQ |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Base Product Number | GP2T080A |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Power Dissipation (Max) | 188W (Tc) |
| Supplier Device Package | TO-247-4 |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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