IDH04G65C6XKSA1
Infineon Technologies
Product No:
IDH04G65C6XKSA1
Manufacturer:
Package:
PG-TO220-2
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 650V 12A TO220-2
Quantity:
In Stock : 13441
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.128
10
1.76415
100
1.404005
500
1.188032
1000
1.008026
2000
0.957628
5000
0.921624
10000
0.89111
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | IDH04G65 |
| Capacitance @ Vr, F | 205pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 14 µA @ 420 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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