Home / Single Diodes / IDH10G65C6XKSA1

IDH10G65C6XKSA1

Infineon Technologies

Product No:

IDH10G65C6XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-2

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 24A TO220-2

Quantity:

In Stock : 1740

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    4.3415

  • 10

    3.64135

  • 100

    2.946045

  • 500

    2.618675

  • 1000

    2.242238

  • 2000

    2.111299

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number IDH10G65
Capacitance @ Vr, F 495pF @ 1V, 1MHz
Supplier Device Package PG-TO220-2
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 24A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 10 A