IPAN60R600P7SXKSA1
Infineon Technologies
Product No:
IPAN60R600P7SXKSA1
Manufacturer:
Package:
PG-TO220 Full Pack
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 6A TO220
Quantity:
In Stock : 400
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.1115
10
0.90915
100
0.707275
500
0.599469
1000
0.488338
2000
0.459714
5000
0.437817
10000
0.41761
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Base Product Number | IPAN60 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.7A, 10V |
| Power Dissipation (Max) | 21W (Tc) |
| Supplier Device Package | PG-TO220 Full Pack |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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