Home / Single FETs, MOSFETs / IPB160N04S3H2ATMA1

IPB160N04S3H2ATMA1

Infineon Technologies

Product No:

IPB160N04S3H2ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 160A TO263-7

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Last Time Buy
Vgs(th) (Max) @ Id 4V @ 150µA
Base Product Number IPB160
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.1mOhm @ 80A, 10V
Power Dissipation (Max) 214W (Tc)
Supplier Device Package PG-TO263-7-3
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 9600 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)