IPD30N03S4L09ATMA1
Infineon Technologies
Product No:
IPD30N03S4L09ATMA1
Manufacturer:
Package:
PG-TO252-3-11
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 30V 30A TO252-3
Quantity:
In Stock : 48176
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.026
10
0.91485
100
0.71345
500
0.589399
1000
0.46531
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 13µA |
| Base Product Number | IPD30N03 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| Power Dissipation (Max) | 42W (Tc) |
| Supplier Device Package | PG-TO252-3-11 |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
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