Home / FET, MOSFET Arrays / IPG20N06S2L65AAUMA1

IPG20N06S2L65AAUMA1

Infineon Technologies

Product No:

IPG20N06S2L65AAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-10

Batch:

-

Datasheet:

-

Description:

MOSFET

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 43W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 14µA
Base Product Number IPG20N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 10V
Supplier Device Package PG-TDSON-8-10
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 55V
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)