IPI029N06NAKSA1

Infineon Technologies

Product No:

IPI029N06NAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 24A/100A TO262-3

Quantity:

In Stock : 71

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.128

  • 10

    1.91045

  • 100

    1.535675

  • 500

    1.261695

  • 1000

    1.045408

  • 2000

    0.973313

  • 5000

    0.93726

  • 10000

    0.901208

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 75µA
Base Product Number IPI029
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Supplier Device Package PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc)