IPI60R299CP
Infineon Technologies
Product No:
IPI60R299CP
Manufacturer:
Package:
PG-TO262-3-1
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
In Stock : 8500
Minimum: 1 Multiples: 1
Qty
Unit Price
231
1.235
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| Power Dissipation (Max) | 96W (Tc) |
| Supplier Device Package | PG-TO262-3-1 |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
