IPP114N12N3G

Infineon Technologies

Product No:

IPP114N12N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

-

Description:

IPP114N12 - 12V-300V N-CHANNEL P

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 83µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 11.4mOhm @ 75A, 10V
Power Dissipation (Max) 136W (Tc)
Supplier Device Package PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 4310 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)