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IPT015N10NF2SATMA1

Infineon Technologies

Product No:

IPT015N10NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8

Batch:

-

Datasheet:

-

Description:

MOSFET

Quantity:

In Stock : 1170

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    6.023

  • 10

    5.0597

  • 100

    4.093075

  • 500

    3.638272

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 267µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.5mOhm @ 150A, 10V
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Supplier Device Package PG-HSOF-8
Gate Charge (Qg) (Max) @ Vgs 242 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 315A (Tc)