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IPT111N20NFDATMA1
Infineon Technologies
Product No:
IPT111N20NFDATMA1
Manufacturer:
Package:
PG-HSOF-8-1
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 200V 96A 8HSOF
Quantity:
In Stock : 7886
Minimum: 1 Multiples: 1
Qty
Unit Price
1
8.436
10
7.2276
100
6.022715
500
5.314148
1000
4.782728
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 267µA |
| Base Product Number | IPT111 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 96A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Supplier Device Package | PG-HSOF-8-1 |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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