Infineon Technologies
Product No:
IPW50R299CP
Manufacturer:
Package:
PG-TO247-3-21
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
221
1.292
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Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 440µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
Power Dissipation (Max) | 104W (Tc) |
Supplier Device Package | PG-TO247-3-21 |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Drain to Source Voltage (Vdss) | 500 V |
Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |