IRF1018EPBF
Infineon Technologies
Product No:
IRF1018EPBF
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 60V 79A TO220AB
Quantity:
In Stock : 2241
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.159
10
1.03455
100
0.806835
500
0.666501
1000
0.526186
2000
0.491112
5000
0.466554
10000
0.449018
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Base Product Number | IRF1018 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 47A, 10V |
| Power Dissipation (Max) | 110W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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