Infineon Technologies
Product No:
IRFB42N20DPBF
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
IRFB42N20 - 12V-300V N-CHANNEL P
Quantity:
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Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 55mOhm @ 26A, 10V |
Power Dissipation (Max) | 2.4W (Ta), 330W (Tc) |
Supplier Device Package | TO-220AB |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Drain to Source Voltage (Vdss) | 200 V |
Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |