Home / Single FETs, MOSFETs / PJD35N06A_L2_00001

PJD35N06A_L2_00001

Panjit International Inc.

Product No:

PJD35N06A_L2_00001

Package:

TO-252

Batch:

-

Datasheet:

Description:

60V N-CHANNEL ENHANCEMENT MODE M

Quantity:

In Stock : 2695

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.5795

  • 10

    0.49115

  • 100

    0.34124

  • 500

    0.266456

  • 1000

    0.216581

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Panjit International Inc.
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number PJD35
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 21mOhm @ 20A, 10V
Power Dissipation (Max) 1.1W (Ta), 63W (Tc)
Supplier Device Package TO-252
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta), 35A (Tc)