PJD4NA65H_L2_00001
Panjit International Inc.
Product No:
PJD4NA65H_L2_00001
Manufacturer:
Package:
TO-252
Batch:
-
Datasheet:
Description:
650V N-CHANNEL MOSFET
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Mfr | Panjit International Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | PJD4NA65 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.75Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 34W (Tc) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 423 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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