SCTWA60N120G2-4
STMicroelectronics
Product No:
SCTWA60N120G2-4
Manufacturer:
Package:
TO-247-4
Batch:
-
Datasheet:
Description:
SILICON CARBIDE POWER MOSFET 120
Quantity:
In Stock : 392
Minimum: 1 Multiples: 1
Qty
Unit Price
1
33.155
10
30.58145
25
29.2068
100
26.114265
250
24.911622
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Product Information
Parameter Info
User Guide
| Mfr | STMicroelectronics |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +22V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
| Power Dissipation (Max) | 388W (Tc) |
| Supplier Device Package | TO-247-4 |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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