Infineon Technologies
Product No:
SIDC09D60E6X1SA1
Manufacturer:
Package:
Sawn on foil
Batch:
-
Datasheet:
-
Description:
DIODE GP 600V 20A WAFER
Quantity:
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Mfr | Infineon Technologies |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Series | - |
Package | Bulk |
Technology | Standard |
Mounting Type | Surface Mount |
Package / Case | Die |
Product Status | Obsolete |
Base Product Number | SIDC09D60 |
Capacitance @ Vr, F | - |
Supplier Device Package | Sawn on foil |
Reverse Recovery Time (trr) | 150 ns |
Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 20A |
Operating Temperature - Junction | -55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |