SISH536DN-T1-GE3
Vishay Siliconix
Product No:
SISH536DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8SH
Batch:
-
Datasheet:
Description:
N-CHANNEL 30 V (D-S) MOSFET POWE
Quantity:
In Stock : 4719
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.5795
10
0.49495
100
0.343805
500
0.268413
1000
0.218158
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen V |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SH |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.57W (Ta), 26.5W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 24.7A (Ta), 67.4A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
