SIZ200DT-T1-GE3
Vishay Siliconix
Product No:
SIZ200DT-T1-GE3
Manufacturer:
Package:
8-PowerPair® (3.3x3.3)
Batch:
-
Datasheet:
Description:
MOSFET N-CH DUAL 30V
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 4.3W (Ta), 33W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Base Product Number | SIZ200 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V |
| Supplier Device Package | 8-PowerPair® (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V, 30nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V, 1600pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
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