SPP35N10

Infineon Technologies

Product No:

SPP35N10

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 35A TO220-3

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series SIPMOS®
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 83µA
Base Product Number SPP35N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 44mOhm @ 26.4A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)