Toshiba Semiconductor and Storage
Product No:
SSM6J507NU,LF
Manufacturer:
Package:
6-UDFNB (2x2)
Batch:
-
Datasheet:
-
Description:
MOSFET P-CH 30V 10A 6UDFNB
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.418
10
0.36005
100
0.26866
500
0.21109
1000
0.163115
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Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | +20V, -25V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Base Product Number | SSM6J507 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 10V |
Power Dissipation (Max) | 1.25W (Ta) |
Supplier Device Package | 6-UDFNB (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |