STB11NM60-1

STMicroelectronics

Product No:

STB11NM60-1

Manufacturer:

STMicroelectronics

Package:

I2PAK

Batch:

-

Datasheet:

Description:

MOSFET N-CH 650V 11A I2PAK

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr STMicroelectronics
Series MDmesh™
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 250µA
Base Product Number STB11N
Operating Temperature -65°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
Power Dissipation (Max) 160W (Tc)
Supplier Device Package I2PAK
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)