TJ90S04M3L,LQ

Toshiba Semiconductor and Storage

Product No:

TJ90S04M3L,LQ

Package:

DPAK+

Batch:

-

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR DPA

Quantity:

In Stock : 1388

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.014

  • 10

    1.6739

  • 100

    1.332185

  • 500

    1.127213

  • 1000

    0.956432

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +10V, -20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2V @ 1mA
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 4.3mOhm @ 45A, 10V
Power Dissipation (Max) 180W (Tc)
Supplier Device Package DPAK+
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 90A (Ta)