TK10Q60W,S1VQ
Toshiba Semiconductor and Storage
Product No:
TK10Q60W,S1VQ
Manufacturer:
Package:
I-Pak
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 9.7A IPAK
Quantity:
In Stock : 75
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.774
10
2.49185
100
2.002885
500
1.645552
1000
1.36345
2000
1.269418
5000
1.222403
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Base Product Number | TK10Q60 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.9A, 10V |
| Power Dissipation (Max) | 80W (Tc) |
| Supplier Device Package | I-Pak |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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