TK35N65W5,S1F

Toshiba Semiconductor and Storage

Product No:

TK35N65W5,S1F

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 35A TO247

Quantity:

In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    8.303

  • 10

    7.5012

  • 100

    6.20996

  • 500

    5.407552

  • 1000

    4.709806

  • 2000

    4.535366

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 2.1mA
Base Product Number TK35N65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 95mOhm @ 17.5A, 10V
Power Dissipation (Max) 270W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)