TK56E12N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK56E12N1,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 120V 56A TO-220

Quantity:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.539

  • 10

    1.38035

  • 100

    1.10979

  • 500

    0.911772

  • 1000

    0.755459

  • 2000

    0.703361

  • 5000

    0.677312

  • 10000

    0.651263

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number TK56E12
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 7mOhm @ 28A, 10V
Power Dissipation (Max) 168W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)