TK7A90E,S4X

Toshiba Semiconductor and Storage

Product No:

TK7A90E,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 900V 7A TO220SIS

Quantity:

In Stock : 98

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.5485

  • 10

    1.28345

  • 100

    1.021535

  • 500

    0.864405

  • 1000

    0.733438

  • 2000

    0.696768

  • 5000

    0.670576

  • 10000

    0.648375

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series π-MOSVIII
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 700µA
Base Product Number TK7A90
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 2Ohm @ 3.5A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Drain to Source Voltage (Vdss) 900 V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)