TK8Q65W,S1Q

Toshiba Semiconductor and Storage

Product No:

TK8Q65W,S1Q

Package:

I-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 7.8A IPAK

Quantity:

In Stock : 5

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.5675

  • 10

    1.30245

  • 100

    1.036545

  • 500

    0.877078

  • 1000

    0.744192

  • 2000

    0.70698

  • 5000

    0.6804

  • 10000

    0.657875

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 300µA
Base Product Number TK8Q65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 670mOhm @ 3.9A, 10V
Power Dissipation (Max) 80W (Tc)
Supplier Device Package I-Pak
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta)