TK9A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
Product No:
TK9A60D(STA4,Q,M)
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 9A TO220SIS
Quantity:
In Stock : 47
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.843
10
1.65775
100
1.33247
500
1.09478
1000
0.907108
2000
0.84455
5000
0.813276
10000
0.781992
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | π-MOSVII |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | TK9A60 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 830mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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