TRS12N65FB,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS12N65FB,S1Q
Manufacturer:
Package:
TO-247
Batch:
-
Datasheet:
-
Description:
SIC SBD TO-247 V=650 IF=12A
Quantity:
In Stock : 55
Minimum: 1 Multiples: 1
Qty
Unit Price
1
4.617
10
3.87885
100
3.138135
500
2.789466
1000
2.388471
2000
2.249002
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Base Product Number | TRS12N65 |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Current - Average Rectified (Io) (per Diode) | 6A (DC) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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