TRS6E65F,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS6E65F,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 650V 6A TO220-2L
Quantity:
In Stock : 1
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.565
10
2.1565
100
1.74439
500
1.550552
1000
1.327663
2000
1.250134
5000
1.199375
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | TRS6E65 |
| Capacitance @ Vr, F | 22pF @ 650V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 6A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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