TSM60NB099PW C1G
Taiwan Semiconductor Corporation
Product No:
TSM60NB099PW C1G
Manufacturer:
Package:
TO-247
Batch:
-
Datasheet:
Description:
MOSFET N-CHANNEL 600V 38A TO247
Quantity:
In Stock : 2055
Minimum: 1 Multiples: 1
Qty
Unit Price
1
13.8795
10
12.22365
100
10.57198
500
9.580883
1000
8.787975
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Product Information
Parameter Info
User Guide
| Mfr | Taiwan Semiconductor Corporation |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | TSM60 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 11.7A, 10V |
| Power Dissipation (Max) | 329W (Tc) |
| Supplier Device Package | TO-247 |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2587 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
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