TSM60NB190CM2 RNG

Taiwan Semiconductor Corporation

Product No:

TSM60NB190CM2 RNG

Package:

TO-263 (D²Pak)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 600V 18A TO263

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number TSM60
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V
Power Dissipation (Max) 150.6W (Tc)
Supplier Device Package TO-263 (D²Pak)
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1273 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)