TSM80N1R2CI

Taiwan Semiconductor Corporation

Product No:

TSM80N1R2CI

Package:

ITO-220

Batch:

-

Datasheet:

Description:

800V, 5.5A, SINGLE N-CHANNEL POW

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number TSM80
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.8A, 10V
Power Dissipation (Max) 25W (Tc)
Supplier Device Package ITO-220
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)